The thin-film stress and strain that occur in real-time during growth impact the thin-film performance and reliability. k-Space offers four tools to measure thin-film stress and strain all based on the kSA MOS optically based technology. The kSA MOS is used for real-time measurement in situ during processes such as MBE, sputtering, PLD, E-beam evaporation, and thermal processing. For MOCVD, the kSA ICE provides real-time in situ modular system. The kSA MOS UltraScan and kSA MOS ThermalScan are ex situ used on wafers, mirrors, glass, and more.
Thin-film Stress and Strain
In Situ Thin-Film Stress, Strain and Wafer Curvature
kSA MOS
In Situ tool for measuring real-time film stress, film strain, and wafer curvature induced by thin films or thermal processes on a substrate/wafer.
kSA ICE
MOS Module: In situ modular tool for measuring real-time film stress, film strain and wafer curvature induced by thin films or thermal processes on a substrate/wafer, ideal for MOCVD reactors with high speed or low speed rotation and limited optical access.
Ex-Situ Thin-film Stress, Strain, Wafer Curvature, Bow, and Tilt
kSA MOS Ultra/ThermalScan
Ex situ tool with full 2D wafer mapping, for measuring film stress, film strain, and wafer curvature, bow, and tilt induced by thin films or thermal processes on a substrate/wafer.
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